AFP1601E = DMP21D0UFB4-7B
General Description Features
AFP1601E, P-Channel enhancement mode
MOSFET, uses Advanced Trench Technology
to provide excellent RDS(ON), low gate charge.
These devices are particularly suited for low
voltage power management, such as smart
phone and notebook computer, and low in-line
power loss are needed in commercial industrial
surface mount applications.
-20V/-0.4A, RDS(ON)= 500 m@ VGS =-4.5V
-20V/-0.3A, RDS(ON)= 680 m@ VGS =-2.5V
-20V/-0.1A, RDS(ON)= 995 m@ VGS =-1.8V
Low Offset (Error) Voltage
Low-Voltage Operation
High-Speed Circuits
ESD Protection Diode design–in
Low Battery Voltage Operation
DFN1.0X0.6-3L package design |
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